Steplike spectral distribution of photoelectrons at the percolation threshold in heavily p -doped GaAs
نویسندگان
چکیده
منابع مشابه
Optical characterizations of heavily doped p-type AlxGa1−xAs and GaAs epitaxial films at terahertz frequencies
The optical properties of p-type AlxGa1−xAs sx=0, 0.01, and 0.16d epitaxial films with different beryllium and carbon doping concentrations s1018–1019 cm−3d were investigated by far-infrared reflectance spectroscopy in the 1.5–15-THz frequency range. The dielectric response functions of the film samples were expressed using the classical Lorentz–Drude model. Optical properties were obtained usi...
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Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the presence of etch pits ranging in size from 0.01 to 2 mm and they were strongly dependent on the electrochemical etching conditions. The etch pits chemical composition consists of O, Ga and As whereas the porous structure c...
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The optical-absorption coefficient o.(m) in heavily doped nand p-type GaAs is evaluated for comparison with the observed values of Casey et al. The purpose is to test the theory of electrons in heavily disordered systems derived by Sa-yakanit and the absorption matrix element (ME) which follows from this theory. The present calculation of a(m) begins with the density of electron states (DOS) an...
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The incipient infinite cluster appearing at the bond percolation threshold can be decomposed into singly connected "links" and multiply connected "blobs." Here we decompose blobs into objects known in graph theory as 3-blocks. A 3-block is a graph that cannot be separated into disconnected subgraphs by cutting the graph at two or fewer vertices. Clusters, blobs, and 3-blocks are special cases o...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2020
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.102.014204